¹«·á ·¹º§Å×½ºÆ® ¹Þ°í °­»çÆò°¡ ³²±â¸é 1,OOO¿ø ÄíÆù Áï½Ã Àû¸³!

Ȥ½Ã »çÀÌÆ®¿¡¼± ãÁö ¸øÇÑ ±Ã±ÝÇÑ Á¡ÀÌ ÀÖÀ¸¼¼¿ä?
³²°ÜÁֽŠÀ̸ÞÀÏÀ» ÅëÇØ ´äº¯ µå¸®°Ú½À´Ï´Ù.

¹®ÀÇÇϽŠ³»¿ëÀÌ ¹®ÀÚ·Î ¹ß¼ÛµÇ¿À´Ï
¿¬¶ôó¸¦ ³²°ÜÁÖ¼¼¿ä.
¾÷¹«½Ã°£ ¿ù~±Ý ¿ÀÀü9½Ã~¿ÀÈÄ6½Ã
(Á¡½É½Ã°£ ³·12½Ã~¿ÀÈÄ1½Ã)

¿µÀÛ±³Á¤ °Ô½ÃÆÇ

¿µ¾î ¸»Çϱâ¿Í ¾²±â¸¦ µ¿½Ã¿¡ Àâ´Â´Ù!

ÀڽŠÀÖ°Ô ¾µ ¼ö ÀÖ´Â ¿µÀÛ¹®À» À§ÇØ ÆÄ¿öÀ×±Û¸®½¬ ¼ö¾÷À» ¼ö°­ÇϽôÂ
ȸ¿ø´Ôµé²² ¹«·á·Î Á¦°øÇص帮´Â ºÎ°¡ ¼­ºñ½º·Î, Àü¹® ºÐ¾ß¸¦ Á¦¿ÜÇÑ ÀÚÀ¯ ÁÖÁ¦
¶Ç´Â °­»ç´ÔÀÌ ³»Áֽô °úÁ¦¸¦ ȸ¿ø´Ô²²¼­ ¿µ¾î·Î ÀÛ¼ºÇØÁֽøé,
´ã´ç °­»ç ´Ô²²¼­ ¡®¹®¹ý ¿À·ù ±³Á¤¡¯ °ú ¡®´õ ³ªÀº ¿µ¾î½Ä Ç¥Çö¡¯À¸·Î ±³Á¤ÇØÁÖ´Â
¼­ºñ½º ÀÔ´Ï´Ù.

Controlled CVD Growth of Highly ⟨111⟩-Oriented 3C-SiC

ÀÛ¼ºÀÚ: Àå*ÁØ
2023-01-30 1441

ȸ¿ø´ÔÀÇ ¿µÀÛ¹®

Highly ⟨111⟩-oriented 3C-SiC coatings with a distinct surface morphology consisting of hexagonally shaped pyramidal crystals were prepared by chemical vapor deposition (CVD) using silicon tetrachloride (SiCl4) and toluene (C7H8) at T¡Â 1250 ¡ÆC and ptot = 10 kPa. In contrast, similar deposition conditions, with methane (CH4) as the carbon precursor, resulted in randomly oriented 3C-SiC coatings with a cauliflower-like surface of SiC crystallites. No excess carbon was detected in the highly ⟨111⟩-oriented 3C-SiC samples despite the use of aromatic hydrocarbons. The difference in the preferred growth orientation of the 3C-SiC coatings deposited by using C7H8 and CH4 as the carbon precursors was explained via quantum chemical calculations of binding energies on various crystal planes. The adsorption
energy of C6H6 on the SiC (111) plane was 6 times higher than that on the (110) plane. On the other hand, CH3 exhibited equally strong adsorption on both planes.

°­»ç´ÔÀÇ Ã·»è±³Á¤ ³»¿ë

Hello, Jun! Apologies if I was not able to edit some characters because they were not read by the system here. However, thank you for sending it here.-Faith-
Highly ⟨111⟩-oriented 3C-SiC coatings with a distinct surface morphology consisting of hexagonally shaped pyramidal crystals were prepared by chemical vapor deposition (CVD) using silicon tetrachloride (SiCl4) and toluene (C7H8) at T¡Â 1250 ¡ÆC and ptot = 10 kPa. 
>> Highly oriented 3C-SiC coatings with a distinct surface morphology consisting of hexagonally shaped pyramidal crystals were prepared by chemical vapor deposition (CVD) using silicon tetrachloride (SiCl4) and toluene (C7H8) at T¡Â 1250 ¡ÆC and ptot = 10 kPa. 
In contrast, similar deposition conditions, with methane (CH4) as the carbon precursor, resulted in randomly oriented 3C-SiC coatings with a cauliflower-like surface of SiC crystallites. 
>> In contrast, similar deposition conditions with methane (CH4) as the carbon precursor, resulted in randomly oriented 3C-SiC coatings with a cauliflower-like surface of SiC crystallites. 
No excess carbon was detected in the highly ⟨111⟩-oriented 3C-SiC samples despite the use of aromatic hydrocarbons. 
>> No excess carbon was detected in the highly oriented 3C-SiC samples despite the use of aromatic hydrocarbons. 
The difference in the preferred growth orientation of the 3C-SiC coatings deposited by using C7H8 and CH4 as the carbon precursors was explained via quantum chemical calculations of binding energies on various crystal planes. 
>> CORRECT
The adsorption energy of C6H6 on the SiC (111) plane was 6 times higher than that on the (110) plane. 
>> The adsorption energy of C6H6 on the SiC (111) plane was six times higher than that on the (110) plane. 
On the other hand, CH3 exhibited equally strong adsorption on both planes.
>> CORRECT
¹øÈ£ Á¦¸ñ ±Û¾´ÀÌ °ø°³ »óÅ µî·ÏÀÏ Á¶È¸¼ö
125323 Homework from the Feedback (7) ¹Ú*ÇÏ ¿Ï·á 2023-02-03 938
125322 Homework ±Ç*¹Ì ¿Ï·á 2023-02-03 0
125321 homework ¹Ú*¹Î ¿Ï·á 2023-02-03 3
125320 Are people in your country generally close to their families? ¼Û*¶ó ¿Ï·á 2023-02-03 747
125319 2/3 Homework ÃÖ*º½ ¿Ï·á 2023-02-03 889
125318 homework ½Å*ÈÖ ¿Ï·á 2023-02-03 672
125317 I agree. ±è*¼­ ¿Ï·á 2023-02-03 1363
125316 What do you like to do on the weekend? ¹è*ÇÏ ¿Ï·á 2023-02-03 1059
125315 Homework ÇÔ*ÁÖ ¿Ï·á 2023-02-03 1
125314 create ¹Ú*¿ì ¿Ï·á 2023-02-03 654
125313 homework Æí*¿¬ ¿Ï·á 2023-02-03 1
125312 Digital currency lead people to creditor. ±è*¼ö ¿Ï·á 2023-02-03 797
125311 Homework ¼Õ*±Ù ¿Ï·á 2023-02-03 824
125310 Can you easily adapt to changes? Why or why not? ÀÓ*À± ¿Ï·á 2023-02-03 809
125309 Is it worth it to spend your money on food? Why do you think so? ÀÌ*È­ ¿Ï·á 2023-02-03 1
125308 What Korean food will you recommend to a foreigner and why? Àå*±Ô ¿Ï·á 2023-02-03 1023
125307 02.Feb.2022 ±è*Á¤ ¿Ï·á 2023-02-03 1
125306 What do you like to do at the beach? ÀÓ*È£ ¿Ï·á 2023-02-03 0
125305 What is your favorite movie genre? ±è*±Ô ¿Ï·á 2023-02-03 0
125304 Which is better, studying in a private school, public school or... ±¸*¿ì ¿Ï·á 2023-02-03 998

HOW TO USE IT?

[¸¶ÀÌÆäÀÌÁö > ¼ö¾÷ ³»¿ë º¸±â > ÇнÀ Ķ¸°´õ > ¿µÀÛ±³Á¤ ¹öÆ° Ŭ¸¯]

¼ö¾÷ Ƚ¼ö¸¸Å­ ¿µÀÛ±³Á¤ °Ô½ÃÆÇÀÌ »ý¼ºµÇ¸ç,
Áö³­ ³¯Â¥¿¡µµ °Ô½Ã ÇÒ ¼ö ÀÖ½À´Ï´Ù.

ÁÖ5ȸ ¼ö¾÷ : ¿ù 20ȸ ÀÌ¿ë °¡´É
ÁÖ3ȸ ¼ö¾÷ : ¿ù 12ȸ ÀÌ¿ë °¡´É
ÁÖ2ȸ ¼ö¾÷ : ¿ù 08ȸ ÀÌ¿ë °¡´É
01
±³Á¤ ³»¿ëÀº ÃÖ´ë 1,000byte±îÁö ¿Ã¸± ¼ö ÀÖ½À´Ï´Ù.

÷ºÎ ÆÄÀÏÀº ¿øÈ°ÇÑ Ã·»èÀ» À§ÇÑ Âü°íÀÚ·á·Î »ç¿ëµÉ »Ó,
ÆÄÀÏ¿¡ ´ëÇÑ Ã·»èÀº ºÒ°¡´É ÇÕ´Ï´Ù.

¾÷·Îµå °¡´ÉÇÑ Ã·ºÎ ÆÄÀÏÀº ÃÖ´ë 2mb±îÁöÀ̸ç,
÷ºÎ ÇÒ ¼ö ÀÖ´Â ÆÄÀÏ Çü½ÄÀº ´ÙÀ½°ú °°½À´Ï´Ù.

¹®¼­ - PDF, TXT, DOCX,
À̹ÌÁö - JPEG, PNG, GIF
02
Àü¹® ºÐ¾ß¸¦ Á¦¿ÜÇÑ È¸¿ø´ÔÀÌ Á÷Á¢ ÀÛ¼ºÇÑ ±Û¸¸
÷»èÀÌ °¡´ÉÇϸç,

¿Ã·ÁÁֽŠ±ÛÀÇ °­»ç´Ô ÷»èÀº 24½Ã°£ À̳»¿¡
¿Ï·á µÇ´Â °ÍÀ» ¿øÄ¢À¸·Î ÇÏ°í ÀÖ½À´Ï´Ù.
03
ÇÏ·ç °Ô½Ã °¡´ÉÇÑ ±ÛÀº 3ȸ±îÁö À̸ç,
Á¾·áµÈ ¼ö¾÷ÀÇ ¿µÀÛ±³Á¤ °Ô½ÃÆÇÀº
ÀÌ¿ëÀÌ ¾î·Á¿î Á¡ ¾çÇØ ºÎŹ µå¸³´Ï´Ù.
04