¹«·á ·¹º§Å×½ºÆ® ¹Þ°í °­»çÆò°¡ ³²±â¸é 1,OOO¿ø ÄíÆù Áï½Ã Àû¸³!

Ȥ½Ã »çÀÌÆ®¿¡¼± ãÁö ¸øÇÑ ±Ã±ÝÇÑ Á¡ÀÌ ÀÖÀ¸¼¼¿ä?
³²°ÜÁֽŠÀ̸ÞÀÏÀ» ÅëÇØ ´äº¯ µå¸®°Ú½À´Ï´Ù.

¹®ÀÇÇϽŠ³»¿ëÀÌ ¹®ÀÚ·Î ¹ß¼ÛµÇ¿À´Ï
¿¬¶ôó¸¦ ³²°ÜÁÖ¼¼¿ä.
¾÷¹«½Ã°£ ¿ù~±Ý ¿ÀÀü9½Ã~¿ÀÈÄ6½Ã
(Á¡½É½Ã°£ ³·12½Ã~¿ÀÈÄ1½Ã)

¿µÀÛ±³Á¤ °Ô½ÃÆÇ

¿µ¾î ¸»Çϱâ¿Í ¾²±â¸¦ µ¿½Ã¿¡ Àâ´Â´Ù!

ÀڽŠÀÖ°Ô ¾µ ¼ö ÀÖ´Â ¿µÀÛ¹®À» À§ÇØ ÆÄ¿öÀ×±Û¸®½¬ ¼ö¾÷À» ¼ö°­ÇϽôÂ
ȸ¿ø´Ôµé²² ¹«·á·Î Á¦°øÇص帮´Â ºÎ°¡ ¼­ºñ½º·Î, Àü¹® ºÐ¾ß¸¦ Á¦¿ÜÇÑ ÀÚÀ¯ ÁÖÁ¦
¶Ç´Â °­»ç´ÔÀÌ ³»Áֽô °úÁ¦¸¦ ȸ¿ø´Ô²²¼­ ¿µ¾î·Î ÀÛ¼ºÇØÁֽøé,
´ã´ç °­»ç ´Ô²²¼­ ¡®¹®¹ý ¿À·ù ±³Á¤¡¯ °ú ¡®´õ ³ªÀº ¿µ¾î½Ä Ç¥Çö¡¯À¸·Î ±³Á¤ÇØÁÖ´Â
¼­ºñ½º ÀÔ´Ï´Ù.

Controlled CVD Growth of Highly ⟨111⟩-Oriented 3C-SiC

ÀÛ¼ºÀÚ: Àå*ÁØ
2023-01-30 1053

ȸ¿ø´ÔÀÇ ¿µÀÛ¹®

Highly ⟨111⟩-oriented 3C-SiC coatings with a distinct surface morphology consisting of hexagonally shaped pyramidal crystals were prepared by chemical vapor deposition (CVD) using silicon tetrachloride (SiCl4) and toluene (C7H8) at T¡Â 1250 ¡ÆC and ptot = 10 kPa. In contrast, similar deposition conditions, with methane (CH4) as the carbon precursor, resulted in randomly oriented 3C-SiC coatings with a cauliflower-like surface of SiC crystallites. No excess carbon was detected in the highly ⟨111⟩-oriented 3C-SiC samples despite the use of aromatic hydrocarbons. The difference in the preferred growth orientation of the 3C-SiC coatings deposited by using C7H8 and CH4 as the carbon precursors was explained via quantum chemical calculations of binding energies on various crystal planes. The adsorption
energy of C6H6 on the SiC (111) plane was 6 times higher than that on the (110) plane. On the other hand, CH3 exhibited equally strong adsorption on both planes.

°­»ç´ÔÀÇ Ã·»è±³Á¤ ³»¿ë

Hello, Jun! Apologies if I was not able to edit some characters because they were not read by the system here. However, thank you for sending it here.-Faith-
Highly ⟨111⟩-oriented 3C-SiC coatings with a distinct surface morphology consisting of hexagonally shaped pyramidal crystals were prepared by chemical vapor deposition (CVD) using silicon tetrachloride (SiCl4) and toluene (C7H8) at T¡Â 1250 ¡ÆC and ptot = 10 kPa. 
>> Highly oriented 3C-SiC coatings with a distinct surface morphology consisting of hexagonally shaped pyramidal crystals were prepared by chemical vapor deposition (CVD) using silicon tetrachloride (SiCl4) and toluene (C7H8) at T¡Â 1250 ¡ÆC and ptot = 10 kPa. 
In contrast, similar deposition conditions, with methane (CH4) as the carbon precursor, resulted in randomly oriented 3C-SiC coatings with a cauliflower-like surface of SiC crystallites. 
>> In contrast, similar deposition conditions with methane (CH4) as the carbon precursor, resulted in randomly oriented 3C-SiC coatings with a cauliflower-like surface of SiC crystallites. 
No excess carbon was detected in the highly ⟨111⟩-oriented 3C-SiC samples despite the use of aromatic hydrocarbons. 
>> No excess carbon was detected in the highly oriented 3C-SiC samples despite the use of aromatic hydrocarbons. 
The difference in the preferred growth orientation of the 3C-SiC coatings deposited by using C7H8 and CH4 as the carbon precursors was explained via quantum chemical calculations of binding energies on various crystal planes. 
>> CORRECT
The adsorption energy of C6H6 on the SiC (111) plane was 6 times higher than that on the (110) plane. 
>> The adsorption energy of C6H6 on the SiC (111) plane was six times higher than that on the (110) plane. 
On the other hand, CH3 exhibited equally strong adsorption on both planes.
>> CORRECT
¹øÈ£ Á¦¸ñ ±Û¾´ÀÌ °ø°³ »óÅ µî·ÏÀÏ Á¶È¸¼ö
125478 Homesickness ±è*Á¤ ¿Ï·á 2023-02-09 677
125477 ¼÷Á¦ Á¶*Èñ ¿Ï·á 2023-02-09 521
125476 Don\'t want to go to work. ±è*¾Æ ¿Ï·á 2023-02-09 2
125475 Homework ¹è*Çý ¿Ï·á 2023-02-09 481
125474 What are the advantages and disadvantages of technology? ÀÓ*À± ¿Ï·á 2023-02-09 586
125473 . Àå*±Ô ¿Ï·á 2023-02-09 475
125472 homework ä*¼­ ¿Ï·á 2023-02-09 445
125471 2/9 °í*Áø ¿Ï·á 2023-02-09 4
125470 8.Feb.2023 ±è*Á¤ ¿Ï·á 2023-02-09 2
125469 Homework ±Ç*ÀÏ ¿Ï·á 2023-02-09 2
125468 home work ¼Õ*±Ù ¿Ï·á 2023-02-09 491
125467 home work ¼Õ*±Ù ¿Ï·á 2023-02-09 502
125466 What will you do today? ÀÓ*È£ ¿Ï·á 2023-02-09 0
125465 The trend ±è*´Ô ¿Ï·á 2023-02-09 693
125464 Homework ¿À*ºó ¿Ï·á 2023-02-08 3
125463 ESSAY HOMEWORK NO.2 È«*À± ¿Ï·á 2023-02-08 1
125462 Homework ±è*¿ì ¿Ï·á 2023-02-08 474
125461 HOMEWORK È«*¼± ¿Ï·á 2023-02-08 480
125460 Homework ±Ç*¹Ì ¿Ï·á 2023-02-08 0
125459 Homework ±Ç*¹Ì ¿Ï·á 2023-02-08 0

HOW TO USE IT?

[¸¶ÀÌÆäÀÌÁö > ¼ö¾÷ ³»¿ë º¸±â > ÇнÀ Ķ¸°´õ > ¿µÀÛ±³Á¤ ¹öÆ° Ŭ¸¯]

¼ö¾÷ Ƚ¼ö¸¸Å­ ¿µÀÛ±³Á¤ °Ô½ÃÆÇÀÌ »ý¼ºµÇ¸ç,
Áö³­ ³¯Â¥¿¡µµ °Ô½Ã ÇÒ ¼ö ÀÖ½À´Ï´Ù.

ÁÖ5ȸ ¼ö¾÷ : ¿ù 20ȸ ÀÌ¿ë °¡´É
ÁÖ3ȸ ¼ö¾÷ : ¿ù 12ȸ ÀÌ¿ë °¡´É
ÁÖ2ȸ ¼ö¾÷ : ¿ù 08ȸ ÀÌ¿ë °¡´É
01
±³Á¤ ³»¿ëÀº ÃÖ´ë 1,000byte±îÁö ¿Ã¸± ¼ö ÀÖ½À´Ï´Ù.

÷ºÎ ÆÄÀÏÀº ¿øÈ°ÇÑ Ã·»èÀ» À§ÇÑ Âü°íÀÚ·á·Î »ç¿ëµÉ »Ó,
ÆÄÀÏ¿¡ ´ëÇÑ Ã·»èÀº ºÒ°¡´É ÇÕ´Ï´Ù.

¾÷·Îµå °¡´ÉÇÑ Ã·ºÎ ÆÄÀÏÀº ÃÖ´ë 2mb±îÁöÀ̸ç,
÷ºÎ ÇÒ ¼ö ÀÖ´Â ÆÄÀÏ Çü½ÄÀº ´ÙÀ½°ú °°½À´Ï´Ù.

¹®¼­ - PDF, TXT, DOCX,
À̹ÌÁö - JPEG, PNG, GIF
02
Àü¹® ºÐ¾ß¸¦ Á¦¿ÜÇÑ È¸¿ø´ÔÀÌ Á÷Á¢ ÀÛ¼ºÇÑ ±Û¸¸
÷»èÀÌ °¡´ÉÇϸç,

¿Ã·ÁÁֽŠ±ÛÀÇ °­»ç´Ô ÷»èÀº 24½Ã°£ À̳»¿¡
¿Ï·á µÇ´Â °ÍÀ» ¿øÄ¢À¸·Î ÇÏ°í ÀÖ½À´Ï´Ù.
03
ÇÏ·ç °Ô½Ã °¡´ÉÇÑ ±ÛÀº 3ȸ±îÁö À̸ç,
Á¾·áµÈ ¼ö¾÷ÀÇ ¿µÀÛ±³Á¤ °Ô½ÃÆÇÀº
ÀÌ¿ëÀÌ ¾î·Á¿î Á¡ ¾çÇØ ºÎŹ µå¸³´Ï´Ù.
04